MTDK9S6R-0-T1-G

Note : Your request will be directed to Cystech Electronics.

The MTDK9S6R-0-T1-G from Cystech Electronics is a MOSFET with Continous Drain Current 0.50 to 0.63 A, Drain Source Resistance 0.32 to 1.2 ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.3 to 1.2 V. Tags: Surface Mount. More details for MTDK9S6R-0-T1-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTDK9S6R-0-T1-G
  • Manufacturer
    Cystech Electronics
  • Description
    20 V, 0.50 to 0.63 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.50 to 0.63 A
  • Drain Source Resistance
    0.32 to 1.2 ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.3 to 1.2 V
  • Gate Charge
    0.8 nC
  • Switching Speed
    4.8 to 20 ns
  • Power Dissipation
    0.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Note
    Input Capacitance :- 32 pF

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