BSS84WQ

Note : Your request will be directed to Diodes Incorporated.

BSS84WQ Image

The BSS84WQ from Diodes Incorporated is a MOSFET with Continous Drain Current -0.164 A, Drain Source Resistance 3100 to 10000 milliohm, Drain Source Breakdown Voltage -50 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2 to -0.8 V V. Tags: Surface Mount. More details for BSS84WQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    BSS84WQ
  • Manufacturer
    Diodes Incorporated
  • Description
    50 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.164 A
  • Drain Source Resistance
    3100 to 10000 milliohm
  • Drain Source Breakdown Voltage
    -50 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2 to -0.8 V V
  • Power Dissipation
    0.41 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT323
  • Applications
    General Purpose Interfacing Switch, Power Management Functions, Analog Switch

Technical Documents

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