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DMG3413L

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The DMG3413L from Diodes Incorporated is a MOSFET with Continous Drain Current -3 A, Drain Source Resistance 73 to 190 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1.3 to -0.6 V. Tags: Surface Mount. More details for DMG3413L can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMG3413L
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3 A
  • Drain Source Resistance
    73 to 190 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1.3 to -0.6 V
  • Gate Charge
    9 nC
  • Power Dissipation
    1.3 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT23
  • Applications
    DC-DC Converters, Power Management Functions, Analog Switch

Technical Documents
View details on the manufacturer's website
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