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DMGD7N45SSD

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DMGD7N45SSD Image

The DMGD7N45SSD from Diodes Incorporated is a MOSFET with Continous Drain Current 0.5 A, Drain Source Resistance 3000 to 4000 milliohm, Drain Source Breakdown Voltage 450 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3.5 to 4.5 V. Tags: Surface Mount. More details for DMGD7N45SSD can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMGD7N45SSD
  • Manufacturer
    Diodes Incorporated
  • Description
    450 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.5 A
  • Drain Source Resistance
    3000 to 4000 milliohm
  • Drain Source Breakdown Voltage
    450 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3.5 to 4.5 V
  • Gate Charge
    6.9 nC
  • Power Dissipation
    1.64 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Motor Control, Backlighting, DC-DC Converters, Power Management Functions

Technical Documents
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