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DMN1045UFR4

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DMN1045UFR4 Image

The DMN1045UFR4 from Diodes Incorporated is a MOSFET with Continous Drain Current 3.2 A, Drain Source Resistance 25 to 100 milliohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V V. Tags: Surface Mount. More details for DMN1045UFR4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN1045UFR4
  • Manufacturer
    Diodes Incorporated
  • Description
    12 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.2 A
  • Drain Source Resistance
    25 to 100 milliohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V V
  • Gate Charge
    4.8 nC
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    X2-DFN1010-3
  • Applications
    Power Management Functions, Backlighting, Load Switch

Technical Documents
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