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DMN2310UTQ

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The DMN2310UTQ from Diodes Incorporated is a MOSFET with Continous Drain Current 1.2 A, Drain Source Resistance 174 to 400 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.45 to 0.95 V. Tags: Surface Mount. More details for DMN2310UTQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN2310UTQ
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.2 A
  • Drain Source Resistance
    174 to 400 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.45 to 0.95 V
  • Gate Charge
    0.7 nC
  • Power Dissipation
    0.49 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT523
  • Applications
    DC-DC Converters, Load Switch, Power Management Functions

Technical Documents
View details on the manufacturer's website
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