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DMN6069SFVWQ

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The DMN6069SFVWQ from Diodes Incorporated is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 35 to 100 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for DMN6069SFVWQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN6069SFVWQ
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    35 to 100 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    6.4 to 14 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8
  • Applications
    Power-Management Functions, DC-DC Converters

Technical Documents
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