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DMN6070SY

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The DMN6070SY from Diodes Incorporated is a MOSFET with Continous Drain Current 4.1 A, Drain Source Resistance 70 to 110 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for DMN6070SY can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN6070SY
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.1 A
  • Drain Source Resistance
    70 to 110 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    5.6 to 12.3 nC
  • Power Dissipation
    2.1 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT89
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
View details on the manufacturer's website
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