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RQ6L020SP

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The RQ6L020SP from ROHM Semiconductor is a MOSFET with Continous Drain Current -2 to 2 A, Drain Source Resistance 150 to 266 Milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for RQ6L020SP can be seen below.

Product Specifications

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Product Details

  • Part Number
    RQ6L020SP
  • Manufacturer
    ROHM Semiconductor
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2 to 2 A
  • Drain Source Resistance
    150 to 266 Milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    7.2 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-457T
  • Applications
    Switching

Technical Documents
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