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DMN65D8LDWQ

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The DMN65D8LDWQ from Diodes Incorporated is a MOSFET with Continous Drain Current 0.2 A, Drain Source Resistance 6000 to 8000 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for DMN65D8LDWQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN65D8LDWQ
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.2 A
  • Drain Source Resistance
    6000 to 8000 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    0.43 to 0.87 nC
  • Power Dissipation
    0.4 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT363
  • Applications
    DC-DC Converters, Power Management Functions, Battery Operated Systems and Solid-State Relays, Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Technical Documents
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