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BUK9Y4R8-60E

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BUK9Y4R8-60E Image

The BUK9Y4R8-60E from Nexperia is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 2.9 to 10.8 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -15 to 15 V, Gate Source Threshold Voltage 0.5 to 2.45 V. Tags: Surface Mount. More details for BUK9Y4R8-60E can be seen below.

Product Specifications

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Product Details

  • Part Number
    BUK9Y4R8-60E
  • Manufacturer
    Nexperia
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    2.9 to 10.8 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -15 to 15 V
  • Gate Source Threshold Voltage
    0.5 to 2.45 V
  • Gate Charge
    54.8 nC
  • Power Dissipation
    238 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SOT669
  • Applications
    Automotive systems, Motors, lamps and solenoid control, Transmission control, Ultra high performance power switching

Technical Documents
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