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DMNH10H028SCT

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DMNH10H028SCT Image

The DMNH10H028SCT from Diodes Incorporated is a MOSFET with Continous Drain Current 60 A, Drain Source Resistance 19 to 28 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for DMNH10H028SCT can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMNH10H028SCT
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 31.9 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    60 A
  • Drain Source Resistance
    19 to 28 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    31.9 nC
  • Power Dissipation
    2.8 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO220AB
  • Applications
    Motor Control, Backlighting, DC-DC Converters, Power Management Functions

Technical Documents
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