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DMP2022LSSQ

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DMP2022LSSQ Image

The DMP2022LSSQ from Diodes Incorporated is a MOSFET with Continous Drain Current -9.3 A, Drain Source Resistance 8 to 22 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.1 to -0.6 V. Tags: Surface Mount. More details for DMP2022LSSQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP2022LSSQ
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -9.3 A
  • Drain Source Resistance
    8 to 22 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.1 to -0.6 V
  • Gate Charge
    28.1 to 60.2 nC
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
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