The DMT10H010LK3 from Diodes Incorporated is a MOSFET with Continous Drain Current 68.8 A, Drain Source Resistance 6.5 to 15 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.8 V. Tags: Surface Mount. More details for DMT10H010LK3 can be seen below.