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DMTH10H009LFG

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DMTH10H009LFG Image

The DMTH10H009LFG from Diodes Incorporated is a MOSFET with Continous Drain Current 14 to 55 A, Drain Source Resistance 6.4 to 12.5 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.1 to 2.5 V. Tags: Surface Mount. More details for DMTH10H009LFG can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMTH10H009LFG
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 41 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    14 to 55 A
  • Drain Source Resistance
    6.4 to 12.5 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.1 to 2.5 V
  • Gate Charge
    41 nC
  • Power Dissipation
    2.5 to 39 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8
  • Applications
    Synchronous Rectifier, Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
View details on the manufacturer's website
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