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DMTH3004LK3Q

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DMTH3004LK3Q Image

The DMTH3004LK3Q from Diodes Incorporated is a MOSFET with Continous Drain Current 21 A, Drain Source Resistance 3.3 to 7 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -16 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for DMTH3004LK3Q can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMTH3004LK3Q
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    21 A
  • Drain Source Resistance
    3.3 to 7 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -16 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    44 nC
  • Power Dissipation
    107 W
  • Temperature operating range
    -55 to 175 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO252 (DPAK)
  • Applications
    Power Management Functions, DC-DC Converters, BLDC Motor control, Reverse Polarity Protection

Technical Documents
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