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DMTH6015LPDWQ

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DMTH6015LPDWQ Image

The DMTH6015LPDWQ from Diodes Incorporated is a MOSFET with Continous Drain Current 6.6 to 36.3 A, Drain Source Resistance 14.3 to 27 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 1.3 to 2.5 V. Tags: Surface Mount. More details for DMTH6015LPDWQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMTH6015LPDWQ
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6.6 to 36.3 A
  • Drain Source Resistance
    14.3 to 27 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    1.3 to 2.5 V
  • Gate Charge
    7.1 to 14.3 nC
  • Power Dissipation
    2.6 to 39.5 W
  • Temperature operating range
    -55 to 175 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI5060-8
  • Applications
    Wireless Charging, DC-DC Converters, Power Management

Technical Documents
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