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FTK0964DFN56

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The FTK0964DFN56 from First Silicon is a MOSFET with Continous Drain Current 15.8 to 25 A, Drain Source Resistance 42 to 60 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.2 V. Tags: Surface Mount. More details for FTK0964DFN56 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK0964DFN56
  • Manufacturer
    First Silicon
  • Description
    100 V, 15.8 to 25 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    15.8 to 25 A
  • Drain Source Resistance
    42 to 60 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.2 V
  • Gate Charge
    20 to 40 nC
  • Switching Speed
    3.1 to 38 ns
  • Power Dissipation
    73.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DFN56
  • Applications
    Networking, Load Switch, LED applications
  • Note
    Input Capacitance :- 2580 pF
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