1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. First Silicon
  6. FTK2008SOT883

FTK2008SOT883

Request Quote

Note : Your request will be directed to First Silicon.

The FTK2008SOT883 from First Silicon is a MOSFET with Continous Drain Current 0.7 A, Drain Source Resistance 130 to 370 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.35 to 1.1 V. Tags: Surface Mount. More details for FTK2008SOT883 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FTK2008SOT883
  • Manufacturer
    First Silicon
  • Description
    20 V, 0.7 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.7 A
  • Drain Source Resistance
    130 to 370 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.35 to 1.1 V
  • Switching Speed
    4.8 to 17.3 ns
  • Power Dissipation
    100 mW
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DFN1006-3L
  • Applications
    Load/Power Switching, Interfacing Switching, Battery Management for Ultra Small Portable, Electronics Logic Level Shift
  • Note
    Input Capacitance :- 120 pF
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products