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FTK3901DFN56

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The FTK3901DFN56 from First Silicon is a MOSFET with Continous Drain Current -63.2 to -100 A, Drain Source Resistance 2.6 to 5 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.2 to -2.2 V. Tags: Surface Mount. More details for FTK3901DFN56 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK3901DFN56
  • Manufacturer
    First Silicon
  • Description
    -30 V, 138 W, P-Channel Enhancement Mode, MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -63.2 to -100 A
  • Drain Source Resistance
    2.6 to 5 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.2 to -2.2 V
  • Gate Charge
    150 to 250 nC
  • Switching Speed
    25 to 150 ns
  • Power Dissipation
    138 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    PPAK5x6
  • Applications
    Motor Driver Applications, POL Applications, Load Switch, LED Application
  • Note
    Input Capacitance :- 12000 pF

Technical Documents
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