The GBLN2201DF2 from GALAXY CENTURY MICROELECTRONICS is a MOSFET with Continous Drain Current 5 A, Drain Source Resistance 23 to 50 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage ±8 V, Gate Source Threshold Voltage 0.5 to 1.2 V. Tags: Surface Mount. More details for GBLN2201DF2 can be seen below.