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GBLN2201DF2

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The GBLN2201DF2 from GALAXY CENTURY MICROELECTRONICS is a MOSFET with Continous Drain Current 5 A, Drain Source Resistance 23 to 50 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage ±8 V, Gate Source Threshold Voltage 0.5 to 1.2 V. Tags: Surface Mount. More details for GBLN2201DF2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GBLN2201DF2
  • Manufacturer
    GALAXY CENTURY MICROELECTRONICS
  • Description
    ±8 V, 5 A Dual N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    5 A
  • Drain Source Resistance
    23 to 50 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    ±8 V
  • Gate Source Threshold Voltage
    0.5 to 1.2 V
  • Gate Charge
    6.4 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Military, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN2020-6LC

Technical Documents
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