The GBLNAA02DF2 from GALAXY CENTURY MICROELECTRONICS is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 105 to 165 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage ±20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for GBLNAA02DF2 can be seen below.