1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. GeneSiC Semiconductor
  6. G2R1000MT17D

G2R1000MT17D

Download Datasheet Request Quote

Note : Your request will be directed to GeneSiC Semiconductor.

G2R1000MT17D Image

The G2R1000MT17D from GeneSiC Semiconductor is a MOSFET with Continous Drain Current 2 to 5 A, Drain Source Resistance 1000 to 1479 milliohm, Drain Source Breakdown Voltage 1700 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 3 to 5.5 V. Tags: Through Hole. More details for G2R1000MT17D can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    G2R1000MT17D
  • Manufacturer
    GeneSiC Semiconductor
  • Description
    1700 V, 2 to 5 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 to 5 A
  • Drain Source Resistance
    1000 to 1479 milliohm
  • Drain Source Breakdown Voltage
    1700 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    3 to 5.5 V
  • Gate Charge
    11 nC
  • Power Dissipation
    44 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-3
  • Applications
    Auxiliary Power supply, solar Inverters(string and central), Infrastruscture Charging, Industrial moter(AC servo), General Purpose inverters, Pulse power, Piezo drivers, Ion Bean Generatores

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products