1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. GeneSiC Semiconductor
  6. G2R120MT33J

G2R120MT33J

Download Datasheet Request Quote

Note : Your request will be directed to GeneSiC Semiconductor.

G2R120MT33J Image

The G2R120MT33J from GeneSiC Semiconductor is a MOSFET with Continous Drain Current 17 to 33 A, Drain Source Resistance 120 to 251 milliohm, Drain Source Breakdown Voltage 3300 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 2.4 to 3.5 V. Tags: Surface Mount. More details for G2R120MT33J can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    G2R120MT33J
  • Manufacturer
    GeneSiC Semiconductor
  • Description
    3300 V, 17 to 33 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    17 to 33 A
  • Drain Source Resistance
    120 to 251 milliohm
  • Drain Source Breakdown Voltage
    3300 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    2.4 to 3.5 V
  • Gate Charge
    130 nC
  • Power Dissipation
    366 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263-7
  • Applications
    Solar string inverters, EV fast chargers, Pulse Power, SMPS, Energy storage, Solid state Transformers, Solid state circuit Breakers

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products