The G1002L from Goford Semiconductor is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 190 to 260 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Surface Mount. More details for G1002L can be seen below.