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G1006R

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G1006R Image

The G1006R from Goford Semiconductor is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 114 to 145 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Through Hole. More details for G1006R can be seen below.

Product Specifications

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Product Details

  • Part Number
    G1006R
  • Manufacturer
    Goford Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    114 to 145 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    15.5 nC
  • Power Dissipation
    3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-92
  • Applications
    Power switching application, Hard switched and high frequency circuits, Uninterruptible power supply

Technical Documents
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