1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Goford Semiconductor
  6. G3035L

G3035L

Download Datasheet Request Quote

Note : Your request will be directed to Goford Semiconductor.

G3035L Image

The G3035L from Goford Semiconductor is a MOSFET with Continous Drain Current -4.1 A, Drain Source Resistance 48 to 75 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2 to -1 V. Tags: Surface Mount. More details for G3035L can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    G3035L
  • Manufacturer
    Goford Semiconductor
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.1 A
  • Drain Source Resistance
    48 to 75 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2 to -1 V
  • Gate Charge
    12.5 nC
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3L
  • Applications
    PWM applications, Load switch, Power management

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products