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GT095N10S

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The GT095N10S from Goford Semiconductor is a MOSFET with Continous Drain Current 21 A, Drain Source Resistance 8.2 to 13 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.6 V. Tags: Surface Mount. More details for GT095N10S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GT095N10S
  • Manufacturer
    Goford Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    21 A
  • Drain Source Resistance
    8.2 to 13 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.6 V
  • Gate Charge
    29.4 nC
  • Power Dissipation
    8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Applications
    Synchronous Rectification in SMPS or LED Driver, UPS, Motor Control, BMS, High Frequency Circuit

Technical Documents
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