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ES2333

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The ES2333 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current -4.1 to -5.3 A, Drain Source Resistance 31 to 65 milli-ohm, Drain Source Breakdown Voltage -17 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -0.4 to -1.0 V. Tags: Surface Mount. More details for ES2333 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ES2333
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    -17 V, -4.1 to -5.3 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.1 to -5.3 A
  • Drain Source Resistance
    31 to 65 milli-ohm
  • Drain Source Breakdown Voltage
    -17 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -0.4 to -1.0 V
  • Gate Charge
    11 nC
  • Switching Speed
    8 to 77 ns
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 1010 pF

Technical Documents
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