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ESN21307

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The ESN21307 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current -35 to -45 A, Drain Source Resistance 9.5 to 18 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -1.0 to -2.0 V. Tags: Surface Mount. More details for ESN21307 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ESN21307
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    -30 V, -35 to -45 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -35 to -45 A
  • Drain Source Resistance
    9.5 to 18 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -1.0 to -2.0 V
  • Gate Charge
    36 nC
  • Switching Speed
    7 to 48 ns
  • Power Dissipation
    38 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN5x6-8L
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 1980 pF

Technical Documents
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