The ESNQ06R29 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 21 to 27 A, Drain Source Resistance 21 to 40 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.5 V. Tags: Surface Mount. More details for ESNQ06R29 can be seen below.