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ESNQ07R086

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The ESNQ07R086 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 52 to 80 A, Drain Source Resistance 6.6 to 8.6 milli-ohm, Drain Source Breakdown Voltage 68 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 3.5 V. Tags: Surface Mount. More details for ESNQ07R086 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ESNQ07R086
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    68 V, 52 to 80 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    52 to 80 A
  • Drain Source Resistance
    6.6 to 8.6 milli-ohm
  • Drain Source Breakdown Voltage
    68 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 3.5 V
  • Gate Charge
    35 nC
  • Switching Speed
    15 to 95 ns
  • Power Dissipation
    147 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 4065 pF

Technical Documents
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