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ESNR07R075

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The ESNR07R075 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 87 to 108 A, Drain Source Resistance 5.8 to 7.5 milli-ohm, Drain Source Breakdown Voltage 68 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for ESNR07R075 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ESNR07R075
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    68 V, 87 to 108 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    87 to 108 A
  • Drain Source Resistance
    5.8 to 7.5 milli-ohm
  • Drain Source Breakdown Voltage
    68 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    50 nC
  • Switching Speed
    30 to 125 ns
  • Power Dissipation
    192 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 4900 pF

Technical Documents
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