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BUY65CS08J-01(ES)

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BUY65CS08J-01(ES) Image

The BUY65CS08J-01(ES) from Infineon Technologies is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 370 to 900 Milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 5 V. Tags: Surface Mount. More details for BUY65CS08J-01(ES) can be seen below.

Product Specifications

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Product Details

  • Part Number
    BUY65CS08J-01(ES)
  • Manufacturer
    Infineon Technologies
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    370 to 900 Milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 5 V
  • Gate Charge
    30 nC
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Space
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SMD05

Technical Documents
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