The IAUCN08S7N013 from Infineon Technologies is an Automotive Qualified Power MOSFET ideal for general automotive applications. It has a drain-source breakdown voltage of over 80 V, a gate threshold voltage of 2.8 V, and a drain-source on-resistance of less than 1.30 milli-ohms. This MOSFET has a continuous drain current of up to 274 A and a power dissipation of less than 219 W. It features enhanced electrical testing and a robust design. This power MOSFET device offers extended qualification beyond the AEC-Q101 standard. It is 100% avalanche-tested, ensuring better performance and durability. This RoHS-compliant MOSFET is available in a surface-mount package that measures 5.15 x 5.48 mm.