The IMBG65R083M1H from Infineon Technologies is an N-Channel Enhancement Mode SiC MOSFET. It has a drain-source breakdown voltage of over 650 V with a drain-source resistance of 83 mΩ and has a gate threshold voltage of 4.5 V. This MOSFET has a continuous drain current of up to 28 A and power consumption of less than 126 W. It has a gate charge of 19 nC. This MOSFET is built on state-of-the-art Infineon’s SiC trench technology and is used in mid-power applications. It is optimized to enable max system performance, compactness, and reliability. This MOSFET is suitable for bi-directional topologies with continuous hard commutation and is compatible with standard drivers. It is available in a through hole package and is ideal for telecom and server SMPS, UPS, solar PV inverters, EV charging infrastructure, energy storage, battery formation, and Class D amplifier applications.