The IMDQ65R007M2H from Infineon Technologies is a Silicon Carbide MOSFET. It has a drain-source breakdown voltage of 650 V, a gate threshold voltage of 4.5 V, and a drain-source on-resistance of less than 8.5 milli-ohms. This MOSFET is based on Infineon’s second-generation silicon carbide trench technology which ensures high efficiency and high-power density. It has ultra-low switching losses and offers flexibility of gate-source drive voltage. This RoHS-compliant MOSFET integrates a body diode for hard commutation events and utilizes .XT interconnection technology for improved thermal performance. It is available in a surface-mount package that measures 14.90 x 20.86 mm and is suitable for SMPS, solar PV inverters, energy storage and battery formation, UPS, EV charging infrastructure, and motor drive applications.