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IMDQ65R007M2H

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IMDQ65R007M2H Image

The IMDQ65R007M2H from Infineon Technologies is a MOSFET with Continous Drain Current 159 to 196 A, Drain Source Resistance 6.1 to 11 milli-ohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 3.5 to 5.6 V. Tags: Surface Mount. More details for IMDQ65R007M2H can be seen below.

Product Specifications

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Product Details

  • Part Number
    IMDQ65R007M2H
  • Manufacturer
    Infineon Technologies
  • Description
    -10 to 25 V, 159 to 196 A N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    159 to 196 A
  • Drain Source Resistance
    6.1 to 11 milli-ohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    3.5 to 5.6 V
  • Gate Charge
    179 nC
  • Power Dissipation
    937 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-HDSOP-22
  • Applications
    SMPS, Solar PV inverters, Energy storage and battery formation, UPS, EV charging infrastructure, Motor drives

Technical Documents
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