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WNSCM80120R

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The WNSCM80120R from WeEN Semiconductors is a MOSFET with Continous Drain Current 45 A, Drain Source Resistance 80 to 110 milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Through Hole. More details for WNSCM80120R can be seen below.

Product Specifications

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Product Details

  • Part Number
    WNSCM80120R
  • Manufacturer
    WeEN Semiconductors
  • Description
    1200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    45 A
  • Drain Source Resistance
    80 to 110 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    59 nC
  • Power Dissipation
    270 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO247
  • Applications
    Switch Mode Power Supplies, UPS, Solar string inverter and solar optimizer, EV Charger, Motor Drives

Technical Documents
View details on the manufacturer's website
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