The 5SFG 0980B12000x from Hitachi is an N-Channel Enhancement Mode SiC MOSFET that is designed for all e-mobility applications. This MOSFET has a gate-source voltage of 15 V and a gate threshold voltage of up to 2.4 V. It has a drain-source breakdown voltage of over 1200 V and a drain-source on-resistance of 1.9 mΩ. This power MOSFET has a continuous drain current of up to 980 A and a pulsed drain current of less than 1980 A. It is designed with a pin-fin structure that enhances the liquid cooling performance and provides the lowest thermal resistance.
The 5SFG 0980B12000x integrates the latest generation of SiC MOSFET chipset to provide the lowest overall stray inductance, thereby enabling efficient converter designs. It is available as a molded chip that measures 110 x 69 x 17.35 mm and is ideal for main drive train in xEVs, e-trucks, e-buses, traction auxiliary converters, and power electronics for xEV-charging applications.
