The RBA300N10EHPF from Renesas is an Automotive-Qualified N-Channel Power MOSFET that is ideal for small traction (2- or 3-wheelers), 48 V load, on-board chargers, charging station, energy infrastructure, micro inverters, power tools, and DC-DC converter applications. It has a drain-source voltage of up to 100 V, a gate threshold voltage of over 2 V, and a drain-source on-resistance of less than 1.5 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of ±340 A and a power dissipation of less than 468 W. It is based on Renesas’ TOLG technology that features ultra-compactness and gullwing lead designs for compatibility with the TOLL footprint, enhanced thermal performance, management, and higher thermal cycling onboard performance.

This PPAP-capable power MOSFET also uses Renesas’ new split gate technology that ensures low drain-source on-resistance and excellent switching capability for high-power and high-frequency applications. It is rated to moisture sensitivity level 1 (MSL1) as per the IPC/JEDEC J-STD-020 standard. This RoHS-compliant MOSFET is available in a surface-mount package that measures 9.65 x 11.50 mm.