1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Infineon Technologies
  6. IMZA120R007M1H

IMZA120R007M1H

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IMZA120R007M1H Image

The IMZA120R007M1H from Infineon Technologies is a MOSFET with Continous Drain Current 225 A, Drain Source Resistance 7 to 14 Milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -10 to 23 V, Gate Source Threshold Voltage 3.5 to 5.2 V. Tags: Through Hole. More details for IMZA120R007M1H can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IMZA120R007M1H
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    225 A
  • Drain Source Resistance
    7 to 14 Milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 23 V
  • Gate Source Threshold Voltage
    3.5 to 5.2 V
  • Gate Charge
    220 nC
  • Power Dissipation
    750 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO247-4
  • Applications
    General purpose drives (GPD), EV-Charging, Online UPS/Industrial UP, String inverters, Solar power optimizer

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products