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IPB120N04S4L-02

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The IPB120N04S4L-02 from Infineon Technologies is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 1.4 to 2.3 Mohms, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Through Hole. More details for IPB120N04S4L-02 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB120N04S4L-02
  • Manufacturer
    Infineon Technologies
  • Description
    20-40 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    1.4 to 2.3 Mohms
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    143 to 190 nC
  • Power Dissipation
    158 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-3
  • Applications
    Automotive

Technical Documents
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