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IPB120P04P4-04

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The IPB120P04P4-04 from Infineon Technologies is a MOSFET with Continous Drain Current -120 to -110 A, Drain Source Resistance 2.6 to 3.8 Mohms, Drain Source Breakdown Voltage -40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Through Hole. More details for IPB120P04P4-04 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB120P04P4-04
  • Manufacturer
    Infineon Technologies
  • Description
    20-150 V, P-Channel Automotive MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -120 to -110 A
  • Drain Source Resistance
    2.6 to 3.8 Mohms
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    158 to 205 nC
  • Power Dissipation
    136 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-3-2
  • Applications
    Automotive

Technical Documents
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