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Si5457DC

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Si5457DC Image

The Si5457DC from Vishay is a MOSFET with Continous Drain Current -6 A, Drain Source Resistance 30 to 56 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.4 to -0.6 V. Tags: Surface Mount. More details for Si5457DC can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si5457DC
  • Manufacturer
    Vishay
  • Description
    -12 to 12 V, Single, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -6 A
  • Drain Source Resistance
    30 to 56 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.4 to -0.6 V
  • Gate Charge
    25 nC
  • Power Dissipation
    5.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    1206-8 ChipFET
  • Applications
    Portable devices - Load switch - Charger switch - Battery switch - DC/DC converter

Technical Documents
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