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IPB160N04S4-H1

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IPB160N04S4-H1 Image

The IPB160N04S4-H1 from Infineon Technologies is a MOSFET with Continous Drain Current 160 A, Drain Source Resistance 1.4 to 1.6 Mohms, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IPB160N04S4-H1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB160N04S4-H1
  • Manufacturer
    Infineon Technologies
  • Description
    20-40 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    160 A
  • Drain Source Resistance
    1.4 to 1.6 Mohms
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    105 to 137 nC
  • Power Dissipation
    167 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-7-3
  • Applications
    Automotive

Technical Documents
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