The IPB60R299CPA from Infineon Technologies is a MOSFET with Continous Drain Current 7 to 11 A, Drain Source Resistance 0.27 to 0.299 Mohms, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Through Hole. More details for IPB60R299CPA can be seen below.