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IPB65R190CFDA

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The IPB65R190CFDA from Infineon Technologies is a MOSFET with Continous Drain Current 11 to 17.5 A, Drain Source Resistance 0.171 to 0.445 Mohms, Drain Source Breakdown Voltage 650 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3.5 to 4.5 V. Tags: Through Hole. More details for IPB65R190CFDA can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB65R190CFDA
  • Manufacturer
    Infineon Technologies
  • Description
    600-800 V, N-Channel Automotive MOSFET

General

  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11 to 17.5 A
  • Drain Source Resistance
    0.171 to 0.445 Mohms
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3.5 to 4.5 V
  • Gate Charge
    68 nC
  • Power Dissipation
    151 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263
  • Applications
    Automotive

Technical Documents
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