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IPBE65R050CFD7A

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The IPBE65R050CFD7A from Infineon Technologies is a MOSFET with Continous Drain Current 29 to 45 A, Drain Source Resistance 0.041 to 0.092 Mohms, Drain Source Breakdown Voltage 650 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3.5 to 4.5 V. Tags: Through Hole. More details for IPBE65R050CFD7A can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPBE65R050CFD7A
  • Manufacturer
    Infineon Technologies
  • Description
    600-800 V, N-Channel Automotive MOSFET

General

  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    29 to 45 A
  • Drain Source Resistance
    0.041 to 0.092 Mohms
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3.5 to 4.5 V
  • Gate Charge
    102 nC
  • Power Dissipation
    227 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-7-11
  • Applications
    UnidirectionalandbidirectionalDC-Dcconverters, On-BoardbatteryChargers

Technical Documents
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