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IPD50N04S3-09

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The IPD50N04S3-09 from Infineon Technologies is a MOSFET with Continous Drain Current 43 to 50 A, Drain Source Resistance 7.5 to 9 Mohms, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.1 to 4 V. Tags: Through Hole. More details for IPD50N04S3-09 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD50N04S3-09
  • Manufacturer
    Infineon Technologies
  • Description
    20-40 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    43 to 50 A
  • Drain Source Resistance
    7.5 to 9 Mohms
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.1 to 4 V
  • Gate Charge
    20 to 26 nC
  • Power Dissipation
    63 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3-11
  • Applications
    Automotive

Technical Documents
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