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IPD65R420CFDA

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IPD65R420CFDA Image

The IPD65R420CFDA from Infineon Technologies is a MOSFET with Continous Drain Current 5.5 to 8.7 A, Drain Source Resistance 0.378 to 0.983 Mohms, Drain Source Breakdown Voltage 650 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3.5 to 4.5 V. Tags: Through Hole. More details for IPD65R420CFDA can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD65R420CFDA
  • Manufacturer
    Infineon Technologies
  • Description
    600-800 V, N-Channel Automotive MOSFET

General

  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.5 to 8.7 A
  • Drain Source Resistance
    0.378 to 0.983 Mohms
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3.5 to 4.5 V
  • Gate Charge
    32 nC
  • Power Dissipation
    83.3 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO 252
  • Applications
    Automotive

Technical Documents
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